Volume 37 Issue 4
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YANG Shangming, MA Qihua. Dynamic IGBT thermal management strategy based on real-time junction temperature estimation[J]. Journal of Shanghai University of Engineering Science, 2023, 37(4): 387-396. doi: 10.12299/jsues.22-0374
Citation: YANG Shangming, MA Qihua. Dynamic IGBT thermal management strategy based on real-time junction temperature estimation[J]. Journal of Shanghai University of Engineering Science, 2023, 37(4): 387-396. doi: 10.12299/jsues.22-0374

Dynamic IGBT thermal management strategy based on real-time junction temperature estimation

doi: 10.12299/jsues.22-0374
  • Received Date: 2022-12-17
  • Publish Date: 2023-12-30
  • Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is an important energy transfer and conversion component of electric vehicles. But working under varying conditions for a long time will result in high heat loads, which seriously affect IGBT service life. By establishing IGBT junction temperature estimation model for real-time temperature observation, the relationship between IGBT junction temperature, switch frequency and bus voltage was analyzed. In order to reduce the heat load of IGBT under cyclic conditions, the IGBT junction temperature regional control strategy was proposed. Aiming at controlling the maximum junction temperature and the junction temperature fluctuation, the control region was divided, and the switching frequency and bus voltage were controlled by fuzzy control and PI control respectively. The results show that the maximum junction temperature decreases by 5.1 ℃ and the junction temperature fluctuation of IGBT decreases by 2.6 ℃ on average under new European driving cycle (NEDC) condition, which verified the effectiveness of the control strategy and improved the reliability and operation life of IGBT.
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