Design of a differential negative resistor VCO based on GaAs_BJT

DU Xinwei; XIAO Manlin; XIAO Shuai; ZHANG Wenyu

doi:10.12299/jsues.24-0079

Volume 39 Issue 2

Jun. 2025

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DU Xinwei, XIAO Manlin, XIAO Shuai, ZHANG Wenyu. Design of a differential negative resistor VCO based on GaAs_BJT[J]. Journal of Shanghai University of Engineering Science, 2025, 39(2): 223-228. doi: 10.12299/jsues.24-0079

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DU Xinwei, XIAO Manlin, XIAO Shuai, ZHANG Wenyu. Design of a differential negative resistor VCO based on GaAs_BJT[J]. Journal of Shanghai University of Engineering Science, 2025, 39(2): 223-228. doi: 10.12299/jsues.24-0079

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Design of a differential negative resistor VCO based on GaAs_BJT

doi: 10.12299/jsues.24-0079

School of Urban Railway Transportation, Shanghai University of Engineering Science, Shanghai 201620, China

Received Date: 2024-03-19
Available Online: 2025-09-30
Publish Date: 2025-06-30

Abstract

Abstract

A low noise LC-VCO with a working frequency of 3.8~4.0 GHz was designed using the 0.25 μm GaAs HBT process of San'an Optoelectronics. The design adopted a bipolar junction transistor to form a differential negative resistance structure, and used a source resistance bias circuit to provide the working current. Finally, the tail inductance and large-capacity filtering technology were used to improve the noise factor, and the microstrip line was used instead of inductance in the layout design to achieve a lower noise factor. The post-chip simulation results show that the LC-VCO designed has a frequency range of 3.75~4.05 GHz, an amplitude of 1.6 V, a phase noise of −118.8 dBc at 1 MHz offset, and a voltage control sensitivity of 43 MHz/V.
- bipolar junction transistor (BJT),
- differential negative resistance,
- tail inductance

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References(11)

References

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