Design of a differential negative resistor VCO based on GaAs_BJT
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摘要: 基于国产三安光电0.25 μm砷化镓(gallium arsenide, GaAs)异质结双极晶体管(heterojunction bipolar transistor, HBT)工艺，设计一款工作频率在3.8~4.0 GHz的低噪声LC-VCO。采用双极结型晶体管构成差分负阻结构设计，并使用源极电阻偏置电路提供工作电流，最后通过尾电感和大电容滤波技术改善噪声系数，并在版图设计中以微带线代替电感来达到更低的噪声系数。芯片后仿结果表明，本设计中LC-VCO调频范围为3.75~4.05 GHz，振幅为1.6 V，相位噪声在1 MHz偏移处为−118.8 dBc，压控灵敏度为43 MHz/V。Abstract: A low noise LC-VCO with a working frequency of 3.8~4.0 GHz was designed using the 0.25 μm GaAs HBT process of San'an Optoelectronics. The design adopted a bipolar junction transistor to form a differential negative resistance structure, and used a source resistance bias circuit to provide the working current. Finally, the tail inductance and large-capacity filtering technology were used to improve the noise factor, and the microstrip line was used instead of inductance in the layout design to achieve a lower noise factor. The post-chip simulation results show that the LC-VCO designed has a frequency range of 3.75~4.05 GHz, an amplitude of 1.6 V, a phase noise of −118.8 dBc at 1 MHz offset, and a voltage control sensitivity of 43 MHz/V.
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图 1 H20_QEBE管芯直流工作点仿真结果
Figure 1. DC bias simulationt results for H20_QEBE transistor core
图 4 差分负阻小信号等效模型
Figure 4. Differential negative resistance small-signal equivalent model
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